Field effect tetrode
The field effect tetrode is a solid-state device, constructed by creating two field effect channels back-to-back, with a junction between. It is a four terminal device with interesting properties. It does not have specific gate terminals since each channel is a gate for the other,[1] the voltage conditions modulating the current carried by the other channel.[2]
Current voltage relationship
Where the current in the first channel is
, the current in the second channel is
, the voltage of the first channel is
-
and in the second channel
-
we have:
![I_{1} = G_{1}(V_{1} - V_{2})
\left[1-
\frac{2}{3V_p^{1/2}}
\frac{(V_{1} - V_{3})^{(3/2)} - (V_{2} - V_{4})^{(3/2)}}{(V_{1} - V_{3}) - (V_{2} - V_{4})}
\right]](../I/m/744ef98eb746142dcb33a3e167ee2fac.png)
and
![I_{2} = G_{2}(V_{3} - V_{4})
\left[1-
\frac{2}{3V_p^{1/2}}
\frac{(V_{3} - V_{1})^{(3/2)} - (V_{4} - V_{2})^{(3/2)}}{(V_{3} - V_{1}) - (V_{4} - V_{2})}
\right]](../I/m/bd76ec778d29916a2fb2271edb2360a5.png)
Where the
are the low-voltage conductance of the channels and
is the pinch-off voltage (assumed to be the same for each channel).
Applications
The field effect tetrode can be used as a highly linear electronically variable resistor - resistance is not modulated by signal voltage. Signal voltage can exceed bias voltage, pinch-off voltage and junction breakdown voltage. The limit is dependent on dissipation. Signal current flows in inverse proportion to the channel resistances - signal does not modulate the depletion layer, meaning the tetrode can perform at high frequencies. The tuning ratio can be very large - the high resistance limit in the megohms range for symmetrical pinch off conditions.[1]