MoSys
 | |
| Public (NASDAQ: MOSY) | |
| Industry | Fabless semiconductor company (IC) |
| Headquarters | Santa Clara, California United States |
Key people | Len Perham - President, Chief Executive Officer |
| Products | Bandwidth Engine and LineSpeed integrated circuits for networking and communications equipment |
| Slogan |
Breaking Bandwidth Barriers™ foundation = USA (September, 1991) |
| Website | www.mosys.com |
MoSys, Inc. is a publicly traded fabless semiconductor company based in Santa Clara, California that sells solutions for data path connectivity, speed and intelligence while eliminating data access bottlenecks on line cards and systems scaling from 100G to multi-terabits per second. Prior to 2012 it also sold high-performance embedded DRAM under IP cores under the "1T-SRAM" moniker as well high-speed SerDes cores and DDR interface IP. Customers for MoSys IP included a wide range of IDMs, foundries, and other fabless semiconductor companies. Applications included networking, consumer products, graphics systems, general computing, and storage systems.
As of December 2010, MoSys IP cores had shipped in over 370 million devices, including mobile consumer devices, home entertainment systems, graphics systems, networking, and data storage systems. The popular Nintendo GameCube and Wii game consoles used MoSys 1T-SRAM memory IP.
In 2011, MoSys expanded its business model to become a fabless semiconductor company with the 1st sampling of integrated circuits for the MoSys "Bandwidth Engine" product family.[1]
In 2012, MoSys discontinued its IP business in order to concentrate solely on its line of Bandwidth Engine ICs.[2]
In 2013, MoSys introduced its line of LineSpeed integrated circuits with its first offering, a 100G Gearbox.[3]
Legacy Products
- 1T-SRAM IP: a high-performance type of embedded DRAM.
- SerDes and DDR IP: PHYs support a wide range of protocols at advanced process technologies.
Products
- Bandwidth Engine family of integrated circuits: High-density serial memory devices which combine MoSys' patented 1T-SRAM high-density memory technology with its high-speed serial SerDes interface (I/O) technology.
- LineSpeed family of integrated circuits: High-speed CMOS PHY signal integrity solutions designed to support data rates up to 28 Gbit/s for networking, communications, compute, data center and storage applications.